• DocumentCode
    33343
  • Title

    A Material Framework for Beyond-CMOS Devices

  • Author

    Galatsis, Kos ; Ahn, Charles ; Krivorotov, Ilya ; Kim, Philip ; Lake, Roger ; Wang, Kang L. ; Chang, Jane P.

  • Author_Institution
    Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, CA, USA
  • Volume
    1
  • fYear
    2015
  • fDate
    Dec. 2015
  • Firstpage
    19
  • Lastpage
    27
  • Abstract
    Beyond-CMOS devices concepts are greatly dependent on new functional materials to provide inspiration and innovation beyond the silicon status quo. Here, we propose a material framework specifically for beyond-CMOS devices. In doing so, material system examples and data points presented are taken from the Center on Functional Accelerated Nanomaterials Engineering, the STARnet Center of Excellence.
  • Keywords
    CMOS integrated circuits; Couplings; Magnetic domains; Magnetoelectric effects; Magnetostriction; Perpendicular magnetic anisotropy; Beyond CMOS; beyond CMOS; nanodevices; nanoelectronics; nanomaterials;
  • fLanguage
    English
  • Journal_Title
    Exploratory Solid-State Computational Devices and Circuits, IEEE Journal on
  • Publisher
    ieee
  • ISSN
    2329-9231
  • Type

    jour

  • DOI
    10.1109/JXCDC.2015.2424832
  • Filename
    7089215
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=33343