DocumentCode :
33344
Title :
512 
512 Individually Addressable MWIR LED Arrays Based on Type-II InAs/GaSb Superlattices
Author :
Norton, Dennis T. ; Olesberg, Jonathon T. ; McGee, Rodney T. ; Waite, Nicholas A. ; Dickason, Jonathan ; Goossen, K.W. ; Lawler, John ; Sullivan, Gary ; Ikhlassi, Amal ; Kiamilev, Fouad ; Koerperick, Edwin J. ; Murray, Lee M. ; Prineas, John P. ; Boggess,
Author_Institution :
Dept. of Phys. & Astron., Univ. of Iowa, Iowa City, IA, USA
Volume :
49
Issue :
9
fYear :
2013
fDate :
Sept. 2013
Firstpage :
753
Lastpage :
759
Abstract :
Single element 33×33 μm2 InAs/GaSb superlattice light-emitting diodes (SLEDs) operating at 77 K with peak emission at approximately 4.6 μm are demonstrated. A peak radiance of 2.2 W/cm2/sr was measured corresponding to an apparent temperature greater than 1350 K within the 3-5 μm band. A 48 μm pitch, 512 × 512 individually addressable LED array was fabricated from a nominally identical SLED wafer, hybridized with a read-in integrated circuit, and tested. The array exhibited a pixel yield greater than 95%.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; light emitting diodes; optical fabrication; optical materials; semiconductor superlattices; 512 x 512 array; InAs-GaSb; SLED wafer; individually addressable MWIR LED arrays; optical fabrication; peak emission; peak radiance; read-in integrated circuit; size 48 mum; superlattice light-emitting diodes; temperature 77 K; type-II semiconductor superlattices; wavelength 3 mum to 5 mum; Cameras; Cathodes; Fabrication; Superlattices; Superluminescent diodes; Temperature measurement; Array; infrared projection; mid-wave infrared light-emitting diode; type-II superlattice;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2013.2272878
Filename :
6557417
Link To Document :
