Title :
Thermopower investigation of a-As2Se3
Author_Institution :
Dept. of Electr. & Electron. Eng., Victoria Univ. of Technol., Melbourne, Vic., Australia
fDate :
27 Jul-1 Aug 1997
Abstract :
Thermopower and electrical conductivity experiments indicate that a-As2Se3 favours unipolar (holes) conduction. The ratio of electron to hole mobilities is found to be about 0.04 which is considered as relatively small. Photoconductivity measurement further confirms the concept and assumption for the involvement of hopping energy, and an activated mobility is observed in the high temperature, mono-molecular regime. A two level discrete trapping model analysis reveals that localized to localized traps recombination predominates the conduction process, and the Fermi level is found to be pinned in the middle of the mobility gap
Keywords :
Fermi level; arsenic compounds; chalcogenide glasses; electrical conductivity; electrical conductivity measurement; electron mobility; electron traps; electron-hole recombination; hole mobility; hole traps; hopping conduction; photoconductivity; semiconductor thin films; small polaron conduction; sputtered coatings; thermoelectric conversion; thermoelectric power; As2Se3; Fermi level; a-As2Se3; activated mobility; conduction process; electrical conductivity; holes conduction; hopping energy; localized traps recombination; mobility gap; photoconductivity measurement; thermopower; two level discrete trapping model; unipolar conduction; Amorphous materials; Charge carrier processes; Conducting materials; Conductivity; Crystallization; Electrodes; Light emitting diodes; Photoconductivity; Sputtering; Temperature;
Conference_Titel :
Energy Conversion Engineering Conference, 1997. IECEC-97., Proceedings of the 32nd Intersociety
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-4515-0
DOI :
10.1109/IECEC.1997.661921
