High-speed photodiodes for microwave and millimeter-wave systems

Author

Malyshev, Sergei ; Chizh, Alexander ; Vasileuski, Yury

Author_Institution

B.I. Stepanov Inst. of Phys. of Nat. Acad. of Sci. of Belarus, Minsk

fYear

2008

fDate

22-24 Sept. 2008

Firstpage

116

Lastpage

121

Abstract

The high-speed InGaAs/InP p-i-n photodiodes for microwave generation and frequency up-conversion in microwave and millimeter-wave systems is discussed. Based on numerical simulation study of maximal output microwave power with appropriate optical-to-microwave conversion loss for InGaAsP/ InP partially depleted absorber photodiodes in frequency range from 10 to 60 GHz are presented. The design and operation regime peculiarities of InGaAs/InP p-i-n photodiode as optoelectronic up-converter in radio-over-fiber system are provided.

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; microwave generation; microwave photonics; millimetre wave generation; optical design techniques; optical fibre losses; optical frequency conversion; p-i-n photodiodes; radio-over-fibre; InGaAs-InP; frequency 10 GHz to 60 GHz; frequency up-conversion; high-speed p-i-n photodiode; microwave generation; millimeter-wave system; optical-microwave conversion loss; optoelectronic up-converter; radio-over-fiber system; High speed optical techniques; Microwave antennas; Microwave generation; Optical attenuators; Optical filters; Optical mixing; Optical modulation; Optical network units; Optical sensors; Photodiodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Radar and Remote Sensing Symposium, 2008. MRRS 2008

Conference_Location

Kiev

Print_ISBN

978-1-4244-2688-1

Electronic_ISBN

978-1-4244-2689-8

Type

conf

DOI

10.1109/MRRS.2008.4669559

Filename

4669559