DocumentCode
3334690
Title
Radiation Characteristics of a 0.11μm Modified Commercial CMOS Process
Author
Poivey, Christian ; Kim, Hak ; Berg, Melanie D. ; Forney, Jim ; Seidleck, Christina ; Vilchis, Miguel A. ; Phan, Anthony ; Irwin, Tim ; LaBel, Kenneth A. ; Saigusa, Rajan K. ; Mirabedini, Mohammad R. ; Finlinson, Rick ; Suvkhanov, Agajan ; Hornback, Verne
Author_Institution
MEI Technol., Seabrook, MD
fYear
2006
fDate
17-21 July 2006
Firstpage
150
Lastpage
153
Abstract
The authors present radiation data, total ionizing dose and single event effects, on the LSI logic 0.11 μm commercial process and two modified versions of this process. Modified versions include a buried layer to guarantee single event latch up immunity.
Keywords
CMOS digital integrated circuits; buried layers; flip-flops; large scale integration; radiation hardening (electronics); 0.11 micron; CMOS digital integrated circuits; LSI logic; buried layer; radiation data; radiation effects; radiation hardening; single event effects; single event latch up immunity; total ionizing dose; CMOS process; Electronics packaging; Large scale integration; Logic; Plastic packaging; Power supplies; Random access memory; Testing; Vehicles; Voltage; CMOS digital integrated circuits; Radiation effects; Radiation hardening;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2006 IEEE
Conference_Location
Ponte Vedra, FL
Print_ISBN
1-4244-0638-2
Type
conf
DOI
10.1109/REDW.2006.295484
Filename
4077298
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