DocumentCode
3335704
Title
A bulk-Si-compatible ultrathin-body SOI technology for sub-100 nm MOSFETs
Author
Subramanian, V. ; Kedzierski, J. ; Lindert, Nick ; Tam, H. ; Su, Y. ; McHale, J. ; Cao, K. ; King, T.-J. ; Bokor, J. ; Hu, C.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fYear
1999
fDate
23-23 June 1999
Firstpage
28
Lastpage
29
Abstract
A novel method of forming 80 nm gate length ultrathin-body SOI MOSFETs has been presented. Lateral solid-phase epitaxy of a deposited amorphous Si film was used to provide excellent controllability over 20 nm body thickness, resulting in good uniformity of device characteristics. The ultrathin body provides good short channel effect suppression. Further optimization should enable fabrication of high-performance devices using a technology compatible with on-chip bulk devices.
Keywords
MOSFET; silicon-on-insulator; solid phase epitaxial growth; Si; amorphous Si film; lateral solid phase epitaxy; short channel effect; ultrathin-body SOI MOSFET; Amorphous materials; Amorphous silicon; Crystallization; Epitaxial growth; Etching; Fabrication; Immune system; Implants; MOSFETs; Semiconductor films;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 1999 57th Annual
Conference_Location
Santa Barbara, CA, USA
Print_ISBN
0-7803-5170-3
Type
conf
DOI
10.1109/DRC.1999.806312
Filename
806312
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