GaSb/InSb/AlGaAsSb heterostructures grown on LiNbO/sub 3/ substrates and their application to highly efficient surface acoustic wave convolver

Author

Kuze, N. ; Goto, H. ; Kanno, Y. ; Tsunashima, M. ; Yamagata, Y. ; Yamanouchi, Kazuhiko

Author_Institution

Asahi Chem. Ind. Co. Ltd., Shizuoka, Japan

fYear

1999

fDate

23-23 June 1999

Firstpage

56

Lastpage

57

Abstract

Presents for the first time the growth of GaSb/InSb/AlGaAsSb heterostructures on LiNbO/sub 3/ substrates by molecular beam epitaxy and their application to a novel strip-coupled surface acoustic wave (SAW) convolver. High efficiencies of more than -14 dBm have been obtained by using the GaSb/InSb/AlGaAsSb heterostructures and the new electrode design of the SAW convolver. In the spread spectrum communication system, the highly efficient SAW convolver opens up the possibility for a high performance and low power consumption demodulator of the receiver.

Keywords

III-V semiconductors; aluminium compounds; demodulators; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor growth; spread spectrum communication; surface acoustic wave convolution; surface acoustic wave devices; GaSb-InSb-AlGaAsSb; LiNbO/sub 3/; demodulator; electrode design; molecular beam epitaxy; power consumption; spread spectrum communication system; strip-coupled surface acoustic wave device; surface acoustic wave convolver; Acoustic waves; Convolution; Convolvers; Electrodes; Laboratories; Radio frequency; Semiconductor films; Strips; Substrates; Surface acoustic waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1999 57th Annual

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-5170-3

Type

conf

DOI

10.1109/DRC.1999.806321

Filename

806321