Micromachined pressure sensors with Al/sub x/Ga/sub 1-x/As/GaAs- and InAs/AlSb/GaSb-resonant tunneling diodes

Author

Mutamba, K. ; Sigurdardottir, A. ; Vogt, A. ; Pfeiffer, J. ; Behner, U. ; Di Carlo, A. ; Hartnagel, H.L.

Author_Institution

Inst. fuer Hochfrequenztech., Tech. Univ. Darmstadt, Germany

fYear

1999

fDate

23-23 June 1999

Firstpage

64

Lastpage

65

Abstract

We report on the development of micromachined pressure sensors utilizing uniaxial pressure effects in resonant tunneling diodes (RTDs) made from the material systems Al/sub x/Ga/sub 1-x/As/GaAs and InAs/AlSb/GaSb. High stress sensitivities with K-Factors (relative change of the RTD voltage or current in dependence of the strain) ranging between 130 and 1400 are combined with the etching selectivity of the different materials to produce membrane structures.

Keywords

III-V semiconductors; aluminium compounds; etching; gallium arsenide; gallium compounds; indium compounds; membranes; micromachining; microsensors; pressure sensors; resonant tunnelling diodes; AlGaAs-GaAs; InAs-AlSb-GaSb; K-factor; etching; membrane; micromachining; pressure sensor; resonant tunneling diode; stress sensitivity; Biomembranes; Capacitive sensors; Diodes; Etching; Gallium arsenide; Pressure effects; Resonant tunneling devices; Sensor systems; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1999 57th Annual

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-5170-3

Type

conf

DOI

10.1109/DRC.1999.806325

Filename

806325