Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer

Author

Song, Y.H. ; Bea, J.C. ; Oonishi, M. ; Honda, T. ; Kurino, H. ; Koyanagi, M.

Author_Institution

Dept. of Machine Intelligence & Syst. Eng., Tohoku Univ., Sendai, Japan

fYear

1999

fDate

23-23 June 1999

Firstpage

80

Lastpage

81

Abstract

This paper proposes a novel source and drain junction technology for realizing sub 0.1 /spl mu/m NMOSFETs. In this technology, source and drain extension (SDE) is fabricated using arsenic (As) diffusion from as adsorbed atomic layer on silicon surface by high temperature RTA. This is a first trial of doping method using as as a dopant except for ion implantation for SDE formation of NMOSFET. NMOS-FET fabricated by this technology shows better suppression of short channel effect (SCE) compared to the conventional FET.

Keywords

MOSFET; adsorbed layers; arsenic; diffusion; elemental semiconductors; rapid thermal annealing; semiconductor doping; silicon; 0.1 micron; As; NMOSFET; Si; Si:As; arsenic adsorbed layer; atomic layer doping; diffusion; high temperature RTA; short channel effect; silicon surface; source-drain extension; ultra-shallow junction technology; Atomic layer deposition; Cleaning; Doping profiles; FETs; Hafnium; Ion implantation; MOSFET circuits; Silicon; Surface resistance; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1999 57th Annual

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-5170-3

Type

conf

DOI

10.1109/DRC.1999.806331

Filename

806331