Applying selective liquid-phase deposition instead of reactive ion etching to the contact hole formation of MOSFETs

Owing to the demand of anisotropic etching, RIE is generally used to etch SiO/sub 2/ to form contact holes. However, because RIE easily causes damage, many inevitable drawbacks induced by plasma must be carefully eliminated. In our previous research we have developed an etchingless method by using selective liquid-phase deposition (S-LPD), which has an novel ability of selectively depositing oxide against photoresist, and successfully fabricated submicron contact holes. The contact holes fabricated by S-LPD have shown many excellent characteristics. In this paper, we mainly apply this method to MOSFETs, and show its superiority to replace RIE by comparing the I-V characteristics of prepared devices.