Title :
High performance 0.25 /spl mu/m T-gate SiGe-n-MODFET
Author :
Zeuner, M. ; Hackbarth, T. ; Konig, U. ; Gruhle, A. ; Aniel, F.
Author_Institution :
DaimlerChrysler Res. Center Ulm, Germany
Abstract :
The authors present an n-type hetero-transistor MODFET with improved DC- and RF-characteristics. The layer sequence of the SiGe T-gate n-MODFET is grown by solid source molecular beam epitaxy (MBE) on a high resistivity p-type [100] Si substrate.
Keywords :
Ge-Si alloys; high electron mobility transistors; molecular beam epitaxial growth; semiconductor device measurement; semiconductor growth; semiconductor materials; 0.25 mum; DC-characteristics; MBE; RF-characteristics; Si; SiGe; SiGe T-gate n-MODFET; high performance T-gate SiGe-n-MODFET; high resistivity p-type [100] Si substrate; layer sequence; n-type hetero-transistor MODFET; solid source molecular beam epitaxy; Electron mobility; Frequency; Germanium silicon alloys; Molecular beam epitaxial growth; Ohmic contacts; Silicon germanium; Substrates; Temperature; Transconductance; Voltage;
Conference_Titel :
Device Research Conference Digest, 1999 57th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-5170-3
DOI :
10.1109/DRC.1999.806363
