Low threshold current, high efficiency InGaAsPN based long-wavelength quantum well lasers

Author

Gokhale, M.R. ; Jian Wei ; Studenkov, P. ; Hongsheng Wang ; Forrest, S.R.

Author_Institution

Center for Photonics & Optoelectron. Mater., Princeton Univ., NJ, USA

fYear

1999

fDate

23-23 June 1999

Firstpage

194

Lastpage

195

Abstract

Long wavelength (/spl lambda//spl sim/1.3 /spl mu/m) lasers grown on GaAs using narrow bandgap InGaAsN alloys are the subject of intense material and device research. A high operating temperature range for InGaAsN/GaAs compared to InGaAsP/InP quantum well lasers, and the possibility of fabricating low-cost long-wavelength vertical cavity surface emitting lasers (VCSELs) on GaAs, make the mixed-nitrides attractive for use in uncooled sources for fiber optic communication networks. Here we report record low threshold current density J/sub TH/=2.5 kA/cm/sup 2/ at /spl lambda//spl sim/1.3 /spl mu/m, and record high output powers for nitrogen based quantum well lasers.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; narrow band gap semiconductors; quantum well lasers; 1.3 micron; InGaAsPN; InGaAsPN long-wavelength quantum well laser; efficiency; mixed nitride; narrow bandgap alloy; output power; threshold current; Fiber lasers; Gallium arsenide; Indium phosphide; Optical materials; Photonic band gap; Quantum well lasers; Surface emitting lasers; Temperature distribution; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1999 57th Annual

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-5170-3

Type

conf

DOI

10.1109/DRC.1999.806369

Filename

806369