DocumentCode :
3337001
Title :
Effects of PbTe doping on the thermoelectric properties of (Bi2Te3)0.2(Sb2Te3)0.8
Author :
Kusano, D. ; Hori, Y.
Author_Institution :
Central Res. Inst. of Electr. Power Ind., Kanagawa, Japan
fYear :
2002
fDate :
25-29 Aug. 2002
Firstpage :
13
Lastpage :
16
Abstract :
We have investigated the thermoelectric properties of p-type Bi-Te thermoelectric material doped with PbTe. The samples (Bi2Te3)0.2(Sb2Te3)0.8+xwt%PbTe (x=0, 0.05, 0.1, 0.3, 0.5) were fabricated by the mechanical alloying (MA) and spark plasma sintering (SPS) method. The Seebeck coefficient (α), the electric conductivity (σ), the Hall carrier concentration (np) and the thermal conductivity (K) were measured in the temperature range 323-523 K. The maximum value of the Seebeck coefficient shifted toward a higher temperature with increasing PbTe content. The electric conductivity increased with increasing PbTe content. Although, the values of thermal conductivity of x=0.05, 0.1 samples were increased monotonously with increasing temperature, x=0.3, 0.5 samples showed minimum value then increased with temperature. The dimensionless figure of merit ZT and average ZT were calculated in temperature range 323-523 K. The maximum ZT of 1.12 was obtained for x=0.3 sample at 373 K. The maximum value of the average ZT was 1.02 for x=0.3 sample.
Keywords :
Hall mobility; IV-VI semiconductors; Seebeck effect; antimony compounds; bismuth compounds; carrier density; electrical conductivity; semiconductor materials; thermal conductivity; (Bi2Te3)0.2(Sb2Te3)0.8:PbTe; 323 to 523 K; Hall carrier concentration; PbTe doping; Seebeck coefficient; ZT; electric conductivity; mechanical alloying; spark plasma sintering; thermal conductivity; thermoelectric properties; Alloying; Bismuth; Doping; Plasma measurements; Plasma temperature; Tellurium; Temperature distribution; Temperature measurement; Thermal conductivity; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on
Print_ISBN :
0-7803-7683-8
Type :
conf
DOI :
10.1109/ICT.2002.1190254
Filename :
1190254
Link To Document :
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