• DocumentCode
    3338303
  • Title

    Amorphous thermoelectrics

  • Author

    Nolas, G.S. ; Goldsmid, H.J.

  • Author_Institution
    Dept. of Phys., Univ. of South Florida, Tampa, FL, USA
  • fYear
    2002
  • fDate
    25-29 Aug. 2002
  • Firstpage
    296
  • Lastpage
    298
  • Abstract
    Previous calculations for one of the half-Heusler alloys have indicated that the mean free path may sometimes be greater for phonons than for charge carriers. When this is the case it is likely that the material will display a higher thermoelectric figure of merit in the amorphous rather than the crystalline form. Here we determine the general conditions that must hold for the amorphous form to be superior. The most important quantity is undoubtedly the effective mass of the charge carriers but it appears that this quantity is unlikely to be large enough to make the free path length of the carriers sufficiently small, at room temperature, in any good thermoelectric material. On the other hand, it seems quite possible that amorphous material may be preferred for high-temperature thermoelectric generation.
  • Keywords
    amorphous semiconductors; effective mass; phonons; thermoelectricity; 300 K; amorphous thermoelectrics; effective mass; half-Heusler alloys; high-temperature thermoelectric generation; mean free path; phonons; thermoelectric figure of merit; Acoustic scattering; Amorphous materials; Charge carriers; Conducting materials; Conductivity; Effective mass; Grain size; Phonons; Semiconductor materials; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on
  • Print_ISBN
    0-7803-7683-8
  • Type

    conf

  • DOI
    10.1109/ICT.2002.1190323
  • Filename
    1190323