Title :
Conduit diffusion of dopants in tungsten silicide layers
Author :
Liao, S. ; Bain, M. ; Baine, P. ; McNeill, D.W. ; Armstrong, B.M. ; Gamble, H.S.
Author_Institution :
Sch. of Electron., Electr. Eng. & Comput. Sci., Queen´´s Univ. of Belfast, Belfast
Abstract :
Novel test diode structures have been manufactured to characterise dopant diffusion in tungsten silicide layers. Bipolar diode action is demonstrated experimentally for anneal schedules of 30 minutes at 900degC, indicating long- range diffusion of phosphorus (~ 38 mum). The work function of the silicide was found to be 4.8 eV. SIMS analysis shows dopant redistribution is effected by the segregation to the silicide/oxide interface. The concept of conduit diffusion has been demonstrated experimentally for application in advanced bipolar transistor technology.
Keywords :
bipolar transistors; diffusion; doping; phosphorus; tungsten compounds; advanced bipolar transistor technology; bipolar diode action; conduit diffusion; dopant diffusion; phosphorus; temperature 900 C; test diode structures; time 30 min; tungsten silicide layers; voltage 4.8 EV; Microelectronics; Silicides; Testing; Tungsten;
Conference_Titel :
Microelectronic Test Structures, 2008. ICMTS 2008. IEEE International Conference on
Conference_Location :
Edinburgh
Print_ISBN :
978-1-4244-1800-8
Electronic_ISBN :
978-1-4244-1801-5
DOI :
10.1109/ICMTS.2008.4509315
