DocumentCode
3340697
Title
Measurement and optimisation of bond strength for anodic bonding of glass to dielectric thin films
Author
Cummins, G. ; Lin, H. ; Walton, A.J.
Author_Institution
Inst. of Micro & Nano Syst. Inst. of Integrated Syst., Univ. of Edinburgh, Edinburgh
fYear
2008
fDate
24-27 March 2008
Firstpage
111
Lastpage
116
Abstract
This paper details the optimization and characterization of an anodic bonding process for glass to dielectric thin films. Test structures suitable for non destructive, in-situ measurement of the bond strength at the interface have been used to determine the uniformity and quality of the bond.
Keywords
bonding processes; dielectric thin films; anodic bonding; bond strength optimisation; dielectric thin films; in-situ measurement; Bonding processes; Dielectric measurements; Dielectric thin films; Electrostatics; Glass; Silicon; Temperature; Testing; Titanium; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2008. ICMTS 2008. IEEE International Conference on
Conference_Location
Edinburgh
Print_ISBN
978-1-4244-1800-8
Electronic_ISBN
978-1-4244-1801-5
Type
conf
DOI
10.1109/ICMTS.2008.4509324
Filename
4509324
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