Title :
Electronic transport in mind model solar cells: collection efficiency in the presence of a-Si/c-Si heterointerfaces
Author :
Ley, M. ; Kuznicki, Z.T. ; Ballutaud, D.
Author_Institution :
Lab. PHASE, CNRS, Strasbourg, France
Abstract :
A continuous amorphized a-Si substructure with sharp a-Si/c-Si heterointerfaces has been inserted in a c-Si wafer by P ion implantation followed by a thermal treatment at 500°C. A simulation of the band structure taking into account the differences between the two Si phases of the MIND (multi-interface novel device) model solar cell indicates the presence of a high potential barrier blocking the minority carriers generated in the superficial region of the wafer. Consequently, the collection efficiency is deteriorated in the UV. A theoretical and experimental analysis of the causes and results of such a deterioration on the photocurrent is presented.
Keywords :
band structure; elemental semiconductors; photoconductivity; semiconductor device models; silicon; solar cells; 500 degC; P ion implantation; Si; a-Si/c-Si heterointerfaces; band structure; collection efficiency; electronic transport; mind model solar cells; minority carrier blocking; multi-interface novel device; photocurrent; thermal treatment; Annealing; Circuits; Impurities; Ion beams; Ion implantation; Laboratories; Photoconductivity; Photovoltaic cells; Semiconductor device modeling; Solar power generation;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190475
