Title :
High voltage Cu2ZnSnS4 submodules by hybrid buffer layer
Author :
Hiroi, Homare ; Sakai, Noriyuki ; Kato, Toshihiko ; Sugimoto, Hiroshi
Author_Institution :
Energy Solution Center, Solar Frontier K.K., Atsugi, Japan
Abstract :
Efficiency of 9.2% on Cu2ZnSnS4 submodule was achieved by applying hybrid buffer layer with combination of In-based buffer and Cd-based buffer layers. The hybrid buffer especially enhanced open circuit voltage. Finally world highest voltage of 758mV was achieved by this technique. The XPS depth profile showed there was remarkable diffusion of Cu and O as well as Cd and In. The UPS depth profile indicated that the hybrid buffer layer could improve carrier recombination at the interfaces not only between the buffer and the absorber layers but also between the i-ZnO and the buffer layers.
Keywords :
III-V semiconductors; X-ray photoelectron spectra; buffer layers; cadmium; copper compounds; indium; solar cells; tin compounds; ultraviolet photoelectron spectra; wide band gap semiconductors; zinc compounds; Cd; Cu2ZnSnS4; In; UPS depth profile; XPS depth profile; ZnO; cadmium-based buffer layers; carrier recombination; efficiency 9.2 percent; enhanced open circuit voltage; high voltage submodules; hybrid buffer layer; indium-based buffer; solar cells; voltage 758 mV; Buffer layers; Measurement by laser beam; Photovoltaic cells; Resistance; Scanning electron microscopy; Sputtering; Uninterruptible power systems; CZTS; buffer layer; submodule;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744281