Dynamic behavior of silicon nanocrystal memories during the hot carrier injection

Author

Della Marca, V. ; Masoero, L. ; Postel-Pellerin, J. ; Lalande, F. ; Amouroux, J. ; Delalleau, J. ; Boivin, P. ; Ogier, J.-L. ; Molas, G.

Author_Institution

Im2np, Univ. Aix-Marseille, Marseille, France

fYear

2013

fDate

June 30 2013-July 4 2013

Firstpage

587

Lastpage

590

Abstract

In this paper we present the last improvement on programming window and consumption of silicon nanocrystal memory cell (Si-nc). Using a dynamic technique to measure the drain current during the hot carrier injection (HCI) programming operation, we explain the behavior of Flash floating gate (F.G.) and silicon nanocrystal memories. We use TCAD simulations to reproduce the charge diffusion in the nanocrystal trapping layer in order to understand the physical mechanism. Finally experimental results of electrical characterizations are shown using different bias conditions to compare the devices.

Keywords

electron traps; elemental semiconductors; flash memories; hot carriers; nanostructured materials; silicon; technology CAD (electronics); FG; HCI; Si; TCAD simulations; charge diffusion; drain current; electrical characterizations; flash floating gate; hot carrier injection; nanocrystal memories; nanocrystal trapping layer; physical mechanism; programming window; Computer architecture; Human computer interaction; Microprocessors; Nanocrystals; Nonvolatile memory; Programming; Silicon; Silicon nanocrystal memory; charge diffusion; energy consumption;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid Dielectrics (ICSD), 2013 IEEE International Conference on

Conference_Location

Bologna

ISSN

2159-1687

Print_ISBN

978-1-4799-0807-3

Type

conf

DOI

10.1109/ICSD.2013.6619820

Filename

6619820