DocumentCode
3343306
Title
Three-band model for quantum interference current in semiconductors
Author
Sheik-Bahae, M.
Author_Institution
Dept. of Phys. & Astron., New Mexico Univ., Albuquerque, NM, USA
fYear
1992
fDate
23-28 May 1992
Firstpage
7
Abstract
Summary form only given. A simple three parabolic band model is presented that analytically describes the material scaling and polarization dependence of quantum interference current (QUIC) in zinc-blende semiconductors. It is important to note that the consideration of two valence bands plays a critical role in determining the correct polarization dependence.
Keywords
II-VI semiconductors; light polarisation; quantum interference phenomena; quantum optics; semiconductor device models; valence bands; GaAs; correct polarization dependence; material scaling; polarization dependence; quantum interference current; semiconductors; three parabolic band model; three-band model; valence bands; zinc-blende semiconductors; Absorption; Astronomy; Current density; Electronic mail; Gallium arsenide; Interference; Optical control; Optical polarization; Plasmas; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-576-X
Type
conf
DOI
10.1109/QELS.1999.807087
Filename
807087
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