Physical properties of CdS thin films grown by different techniques: a comparative study

Author

Morales-Acevedo, A. ; Vigil-Galán, O. ; Contreras-Puente, G. ; Vidal-Larramendi, J. ; Arriaga-Mejía, G. ; Chavarria-Castaheda, M. ; Escamilla-Esquivel, A. ; Hernandez-Contreras, H. ; Arias-Carbajal, A. ; Cruz-Gandarilla, F.

Author_Institution

Departamento de Ingenieria Electrica, CINVESTAV-IPN, Mexico City, Mexico

fYear

2002

fDate

19-24 May 2002

Firstpage

624

Lastpage

627

Abstract

In this paper, a comparative study of the properties of CdS thin films grown by laser ablation (LA), close space vapour transport (CSVT), sputtering (Sp) and chemical bath deposition (CBD) is presented, taking into account that the physical properties of CdS thin films depend upon the growth technique, and the optimisation of the growth conditions for each technique. We summarize and discuss our results on growth kinetics, electrical, optical, structural and morphological characteristics, in order to have a more complete evaluation of those techniques for making CdS thin films to be applied to solar cells.

Keywords

II-VI semiconductors; X-ray diffraction; absorption coefficients; cadmium compounds; liquid phase deposited coatings; liquid phase deposition; pulsed laser deposition; semiconductor growth; semiconductor thin films; sputter deposition; sputtered coatings; CdS; CdS thin films; absorption coefficient; chemical bath deposition; close space vapour transport; laser ablation; optimisation; solar cells; sputtering; Chemical lasers; Glass; Laser ablation; Optical films; Photovoltaic cells; Sputtering; Substrates; Thin film circuits; Thin film devices; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

ISSN

1060-8371

Print_ISBN

0-7803-7471-1

Type

conf

DOI

10.1109/PVSC.2002.1190642

Filename

1190642