ZnS buffer layer prepared by sulfurization of sputtered Zn film for Cu(In, Ga)Se2 solar cells

Author

Dae-Hyung Cho ; Ju-Hee Kim ; Jae-Hyung Wi ; Soo-Jeong Park ; Choong-Heui Chung ; Won Seok Han ; Jeha Kim ; Yong-Duck Chung

Author_Institution

Electron. & Telecommun. Res. Inst., Daejeon, South Korea

fYear

2013

fDate

16-21 June 2013

Firstpage

1110

Lastpage

1113

Abstract

We report on a novel method of a fabrication of a ZnS buffer layer for an application of Cu(In, Ga)Se₂ (CIGS) solar cells. The ZnS thin film was prepared by a sulfurization of a sputtered Zn film using a sulfur cracker. The structural and optical properties of the ZnS films and the photovoltaic performance of the ZnS-employed CIGS solar cells were investigated. The thin ZnS film played a sufficient role as a buffer layer achieving the power conversion efficiency of 10.5%.

Keywords

copper compounds; gallium compounds; indium compounds; selenium compounds; semiconductor thin films; solar cells; ternary semiconductors; zinc compounds; CIGS solar cells; Cu(InGa)Se₂; Zn; buffer layer; optical properties; photovoltaic performance; power conversion efficiency; solar cells; sputtered zinc film; structural properties; sulfur cracker; sulfurization; Buffer layers; Optical films; Photovoltaic cells; Sputtering; Temperature measurement; Zinc; CIGS solar cell; ZnS thin film; buffer; cracker; sulfurization;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6744335

Filename

6744335