GaN nanocolumus on Si(III) grown by molecular beam epitaxy

GaN nanocolumns are reproducibly grown by plasma-assisted molecular beam epitaxy on Si(111). The nanocolumn density and diameter, 20-150 nm, are controlled by means of the III/V ratio. The nanocolumns grow parallel to the {J 11] direction of the Sf substrate. The columns have been transferred to a Si(100) substrate covered with a layer of 300nm SiD2. Single nanowire devices have been fabricated using finger shaped electrical contacts (TiIAu) obtained by e-beam patterning technique. The electrical transport properties of the resulting metal-semiconductor-metal nanostructures are analyzed by means of currentvoltage measurements in dark and under UV-illumination.