• DocumentCode
    3343779
  • Title

    Origin of the PL-band characteristic for the GaAs-on-GaInP interface in GaAs /GaInP/GaAs/ doublebeterostructures

  • Author

    Gladkov, P. ; Nohavica, D.

  • fYear
    2004
  • fDate
    17-21 Oct. 2004
  • Firstpage
    17
  • Lastpage
    20
  • Abstract
    In this work we report PL characterization of single heterostructures obtained when GaAs is grown on top of GaO.51InO.49P by LPE. Wide structured PL band in the range 1.4-1.5 eV is characteristic for these structures. The obtained results reveal that this band can be related to the presence of arsenic vacancies in the GaAs layer adjacent to interface. The component with peak at 1.454 eV in this band we ascribe to recombination within a complex (VAs - group IV atomAS)
  • Keywords
    Atomic layer deposition; Bismuth; Epitaxial growth; Epitaxial layers; Gallium arsenide; Heterojunctions; Lattices; Optoelectronic devices; Radiative recombination; Spontaneous emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
  • Conference_Location
    Smolenice Castle, Slovakia
  • Print_ISBN
    0-7803-8335-7
  • Type

    conf

  • DOI
    10.1109/ASDAM.2004.1441147
  • Filename
    1441147
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3343779