DocumentCode :
3344157
Title :
Low frequency noise characterization of the GaN LEDs
Author :
Bychikhin, S. ; Vandamme, L.K.J. ; Kuzmik, J. ; Meneghesso, G. ; Pogany, D.
fYear :
2004
fDate :
17-21 Oct. 2004
Firstpage :
85
Lastpage :
86
Abstract :
The aging of the GaN LEDs was investigated by low frequency noise characterization at different biasing conditions. Two components of the i/fnoise, which are related to the junction and contact noise sources, were observed. It was found that the contact noise source in the thermally aged LEDs exhibits higher fluctuations than in the virgin devices. This difference in noise characteristics could be used as reliability indicator of the GaN LEDs.
Keywords :
Aging; Consumer electronics; Contacts; Fluctuations; Gallium nitride; Light emitting diodes; Low-frequency noise; Solid state circuits; Synthetic aperture sonar; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
Conference_Location :
Smolenice Castle, Slovakia
Print_ISBN :
0-7803-8335-7
Type :
conf
DOI :
10.1109/ASDAM.2004.1441163
Filename :
1441163
Link To Document :
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