Relaxation mechanisms in self-assembled quantum dots studied by near-field spectroscopy

Author

Toda, Yuichiro ; Shinomori, S. ; Moriwaki, Osamu ; Arakawa, Yasuhiko

Author_Institution

Inst. of Ind. Sci., Tokyo Univ., Japan

fYear

1992

fDate

23-28 May 1992

Firstpage

45

Lastpage

46

Abstract

Summary form only given. The study of carrier relaxation in self-assembled quantum dots (SAQDs) is important for understanding the device physics of zero-dimensional (0D) systems. In previous reports on SAQDs, the photoluminescence (PL) excitation (PLE) resonances do not reflect the higher excited slates observed in PL. This phenomenon has been explained by the multiphonon filtering of excited states. However these discussions are based on the ensemble measurements and more detailed analysis is still needed to determine the real relaxation processes in SAQDs. We have investigated dominant relaxation mechanism in SAQDs by single dot spectroscopy.

Keywords

excited states; gallium arsenide; indium compounds; photoluminescence; relaxation; self-assembly; semiconductor quantum dots; GaAs; InGaAs; PL excitation; SAQDs; carrier relaxation; device physics; dominant relaxation mechanism; ensemble measurements; excited states; higher excited slates; multiphonon filtering; near-field spectroscopy; photoluminescence excitation; relaxation mechanisms; relaxation processes; self-assembled quantum dots; single dot spectroscopy; zero-dimensional systems; Assembly; Laser beams; Laser excitation; Nonlinear optics; Optical diffraction; Optical feedback; Optimized production technology; Quantum dots; Spectroscopy; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-576-X

Type

conf

DOI

10.1109/QELS.1999.807151

Filename

807151