• DocumentCode
    3344586
  • Title

    Thermal stability of ruthenium MOS gate electrodes

  • Author

    Tapajna, M. ; Cico, K. ; Luptak, R. ; Husekova, K. ; Frohlich, K. ; Harmmatha, L. ; Hooker, J.C. ; Roozeboom, F.

  • fYear
    2004
  • fDate
    17-21 Oct. 2004
  • Firstpage
    167
  • Lastpage
    170
  • Abstract
    In this paper, thermal stability o/metal-organics vapour deposited (MOCVD) Ru gate electrodes grown on atomic-layer deposited (ALD) Hf02 dielectric films have been analysed. As-deposited MOS capacitors were annealed in forming gas (10% H2 + 90% N2) at temperature range 430 - 590 °C for 30 min. MOS capacitors were analysed by high-frequency capacitance-voltage (G-V), conductance-voltage (G-V) and current voltage (I-V) measurements resulting density of oxide charge, Neff, density of interface states, Dii and leakage current density, Jleak respectively.
  • Keywords
    Annealing; CMOS technology; Capacitance; Capacitance-voltage characteristics; Electrodes; MOCVD; MOS capacitors; MOSFET circuits; Temperature; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
  • Conference_Location
    Smolenice Castle, Slovakia
  • Print_ISBN
    0-7803-8335-7
  • Type

    conf

  • DOI
    10.1109/ASDAM.2004.1441185
  • Filename
    1441185
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3344586