مرکز منطقه ای اطلاع رساني علوم و فناوري - Smooth GaN recess wet photoelectrochemical etching

DocumentCode :

3344757

Title :

Smooth GaN recess wet photoelectrochemical etching

Author :

Gregusova, D. ; Novák, J. ; Hardtdegen, H. ; Soltys, J. ; Kostic, I. ; Gregus, J. ; Kordos, P.

fYear :

2004

fDate :

Oct. 17-21, 2004

Firstpage :

199

Lastpage :

202

Keywords :

Contacts; Electrons; Gallium nitride; Oxidation; Photoconductivity; Rough surfaces; Surface roughness; Temperature; Topology; Wet etching;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on

Print_ISBN :

0-7803-8335-7

Type :

conf

DOI :

10.1109/ASDAM.2004.1441194

Filename :

1441194

Link To Document :