DocumentCode
3345017
Title
Study of p-on-n GaInP2/GaAs tandem cells
Author
Chen, M.B. ; Zhang, Z.W. ; Xiang, X.B. ; Du, W.H. ; Lu, J.F. ; Wang, L.X. ; Chi, W.Y. ; Chang, X.L. ; Wang, W.J. ; Liao, X.B.
Author_Institution
Shanghai Jiao Tong Univ., China
fYear
2002
fDate
19-24 May 2002
Firstpage
900
Lastpage
903
Abstract
This paper describes the study on monolithic p-on-n GaInP2/GaAs; tandem cells. The cell samples were produced by metalorganic vapor phase epitaxy (MOVPE) at lower gas pressure. A modified configuration of tandem cells is introduced, using p+- p--n--n+ structure for GaInP2 top cell, while p+-n structure for GaAs bottom cell. This has brought out much improved photovoltaic performances of the top cells. The reason for doing this was revealed by a numerical modeling, which accounts for a field-aided collection. The resultant best photovoltaic parameters of GaInP2/GaAs tandem cells are as follows: The open circuit voltage Voc = 2.397 V, the short circuit current density Jsc = 14.51 mA/cm2, the fill factor F.F. = 0.873 and the conversion efficiency EFF=22.44% (AMO, 2×2 cm2, 25i).
Keywords
III-V semiconductors; MOCVD coatings; gallium arsenide; gallium compounds; indium compounds; p-n junctions; solar cells; vapour phase epitaxial growth; 2.397 V; GaInP2-GaAs; MOVPE; cell samples; metalorganic vapor phase epitaxy; numerical modeling; p-on-n GaInP2/GaAs tandem cells; photovoltaic parameters; short circuit current density; tandem cells; Epitaxial growth; Epitaxial layers; Gallium arsenide; Numerical models; Photovoltaic systems; Short circuit currents; Solar power generation; Voltage; Wavelength conversion; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN
1060-8371
Print_ISBN
0-7803-7471-1
Type
conf
DOI
10.1109/PVSC.2002.1190725
Filename
1190725
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