DocumentCode :
3345049
Title :
Monolithic multi-cell GaAs laser power converter with very high current density
Author :
Krut, D. ; Sudharsanan, R. ; Nishikawa, W. ; Isshiki, T. ; Ermer, J. ; Karam, N.H.
Author_Institution :
Spectrolab Inc., Sylmar, CA, USA
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
908
Lastpage :
911
Abstract :
A very high current density 2-Volt Laser Power Photovoltaic GaAs converter has been fabricated to produce over 360 mW of output power with monochromatic illumination of one optical Watt at 810 nm. To build-up the voltage, the converter consists of two interconnected N/P GaAs elements integrated in series on the semi-insulating GaAs substrate. Several technological issues, including, conductive losses through the sheet for the series interconnection of elements, have been successfully addressed. This device operates at a nominal optical power density of 57W/cm2, which is equivalent to over 700 suns of AM1.5D illumination, demonstrating feasibility of fabricating high voltage integrated cells for concentrator applications.
Keywords :
III-V semiconductors; current density; gallium arsenide; semiconductor device measurement; solar cells; 2 V; 360 mW; 810 nm; AM1.5D illumination; GaAs; conductive losses; high voltage integrated cells; monochromatic illumination; monolithic multi-cell GaAs laser power converter; very high current density; Current density; Gallium arsenide; Lighting; Optical interconnections; Optical losses; Photovoltaic systems; Power generation; Power lasers; Solar power generation; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190727
Filename :
1190727
Link To Document :
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