DocumentCode
3345136
Title
Criteria for the design of GaInP/GaAs/Ge triple-junction cells to optimize their performance outdoors
Author
McMahon, W.E. ; Kurtz, Sarah ; Emery, K. ; Young, M.S.
Author_Institution
Nat. Renewable Energy Lab., Golden, CO, USA
fYear
2002
fDate
19-24 May 2002
Firstpage
931
Lastpage
934
Abstract
This paper investigates which reference spectrum should be used to design GalnP/GaAs/Ge triple-junction cells (at 300 K) in order to optimize their performance outdoors (at elevated temperatures). The outdoor performance is simulated using direct spectra from the recently proposed Module Energy Rating Procedure. We find that triple-junction cells designed for AM1.5D, low-AOD and AM1.5G standard spectra at 300 K all work well for maximizing daily energy production at elevated temperatures. AM1.5G cells are the best choice for midday power production, whereas AM1.5D cells are the best choice for power production during the morning and evening. Performance of cells optimized for a newly proposed Low-AOD spectrum is intermediate between these two extremes.
Keywords
III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; solar cells; 300 K; AM1.5D; AM1.5G standard spectra; GaInP-GaAs-Ge; GaInP/GaAs/Ge triple-junction cells; Module Energy Rating Procedure; low-AOD; outdoor performance; Design optimization; Gallium arsenide; Laboratories; Lighting; Performance evaluation; Photovoltaic cells; Production; Renewable energy resources; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN
1060-8371
Print_ISBN
0-7803-7471-1
Type
conf
DOI
10.1109/PVSC.2002.1190733
Filename
1190733
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