• DocumentCode
    3345286
  • Title

    Temperature characteristics of high efficiency InGaP/InGaAs/Ge triple-junction solar cells under concentration

  • Author

    Nishioka, Kensuke ; Takamoto, Tatsuya ; Agui, Takaaki ; Kaneiwa, Minoru ; Uraoka, Yukiharu ; Fuyuki, Takashi

  • Author_Institution
    Nara Inst. of Sci. & Technol., Graduate Sch. of Mater. Sci., Ikoma, Japan
  • fYear
    2002
  • fDate
    19-24 May 2002
  • Firstpage
    955
  • Lastpage
    958
  • Abstract
    Temperature characteristics of InGaP/InGaAs/Ge triple-junction solar cells under concentration were evaluated. In the high-temperature range, the temperature coefficients of conversion efficiency and Voc were different from those in the low-temperature range. It was found that the temperature at which the temperature coefficient changed shifted up to the higher temperature with increasing concentration ratio. Because Voc of the Ge single-junction solar cell increased with increasing concentration ratio, the temperature at which Voc became almost 0V rose. A contribution of the induced voltage from the Ge junction to Voc of the triple-junction cell can be maintained at higher temperature by concentration operation. Even low concentration ratio of 14sun was found to be effective for increase in Voc of the triple-junction cell under high temperature operation.
  • Keywords
    III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; solar cells; InGaP-InGaAs-Ge; Induced voltage; concentration operation; concentration ratio; conversion efficiency; high efficiency InGaP/InGaAs/Ge triple-junction solar cells; high-temperature range; low-temperature range; temperature characteristics; Electric variables; Gallium arsenide; Indium gallium arsenide; Lamps; Materials science and technology; Photovoltaic cells; Satellites; Temperature dependence; Temperature distribution; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
  • ISSN
    1060-8371
  • Print_ISBN
    0-7803-7471-1
  • Type

    conf

  • DOI
    10.1109/PVSC.2002.1190756
  • Filename
    1190756