DocumentCode
3345321
Title
Investigation of transport mechanism in silicon solar cells after the exploitation in space
Author
Budaguan, Boris G. ; Sherchenkov, Alexei A. ; Sizov, Alexei V. ; Grabov, Alexei B.
Author_Institution
Dept. of Mater. Sci. & Phys. Chem. (MSPC), Moscow Inst. of Electron. Technol., Russia
fYear
2002
fDate
19-24 May 2002
Firstpage
967
Lastpage
970
Abstract
The degradation of solar cells leads to the modification of charge carriers transport mechanism. This is accompanied by the changes of I-V characteristic of solar cells. So, in this work the measurements of I-V characteristics and analysis of the charge carriers transport mechanisms in silicon solar cells after long-term exploitation in near-Earth orbit were carried out.
Keywords
elemental semiconductors; semiconductor device measurement; silicon; solar cells; I-V characteristic; Si; charge carriers transport; near-Earth orbit; silicon solar cells; solar cell degradation; transport mechanism; Charge carriers; Charge measurement; Current measurement; Degradation; Equations; Photovoltaic cells; Silicon; Spontaneous emission; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN
1060-8371
Print_ISBN
0-7803-7471-1
Type
conf
DOI
10.1109/PVSC.2002.1190760
Filename
1190760
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