Deposition of microcrystalline silicon films and solar cells via the pulsed PECVD technique

Author

Morrison, Scott ; Das, Ujjwal K. ; Madan, Arun

Author_Institution

MVSystems Inc., Golden, CO, USA

fYear

2002

fDate

19-24 May 2002

Firstpage

1102

Lastpage

1105

Abstract

The pulsed plasma CVD technique has been shown to increase the deposition rate without an increase in the particulate count in the plasma which is an important factor in determining the yield of commercial products such as solar cell modules. The technique is also more easily scaled to larger areas than the VHF-PECVD technique. In this paper, we report on the deposition of microcrystalline silicon (μc-Si) films over large area substrates (30 cm × 40 cm) as well on the optimization of μc-Si solar cell devices. The effects of nucleation and substrate pre-treatment on the p/i interface are discussed.

Keywords

elemental semiconductors; nucleation; plasma CVD; plasma CVD coatings; semiconductor thin films; silicon; solar cells; Si; deposition rate; device optimization; microcrystalline silicon films; nucleation; p/i interface; pulsed PECVD; pulsed plasma CVD; solar cells; substrate pre-treatment effects; Conducting materials; Photovoltaic cells; Plasma applications; Plasma materials processing; Plasma properties; Radio frequency; Semiconductor films; Silicon; Substrates; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

ISSN

1060-8371

Print_ISBN

0-7803-7471-1

Type

conf

DOI

10.1109/PVSC.2002.1190798

Filename

1190798