Radiofrequency-assisted metal organic chemical vapor deposition growth of a-axis oriented AlN thin films

A-axis preferred orientation AlN thin films are deposited on Si(100) substrates by radiofrequency-assisted metal organic chemical vapor deposition method. Use high-purity nitrogen as nitrogen precursor and trimethyl-aluminum as aluminum precursor, respectively. Crystalline quality, surface morphology and other properties of the films are investigated by X-ray diffraction and scanning electron microscope method. The results show that a higher growth temperature is helpful for improving the quality of AlN films, while increasing of nitrogen carrier gas flow rate and the radiofrequency power within a certain range will be conducive to the growth of AlN films, but excessively high flow rate or radiofrequency power will be adverse for the growth of AlN films.