Intraband coherence of Bloch-oscillations after resonant scattering observed by resonant secondary emission

Author

Haring Bolivar, P. ; Nusse, S. ; Grahn, H.T. ; Hey, R. ; Kohler, K. ; Kurz, H.

Author_Institution

Inst. fur Halbleitertech. II, Tech. Hochschule Aachen, Germany

fYear

1992

fDate

23-28 May 1992

Firstpage

151

Abstract

Summary form only given. The resonantly excited secondary emission of light (RSE) after coherent optical excitation of a semiconductor is a valuable tool for the investigation of impulse relaxation due to resonant scattering processes. We use the observation of RSE from an Al/sub 0.35/Ga/sub 0.65/As-GaAs superlattice to investigate the coherent dynamics of Bloch oscillations after resonant scattering in a luminescence up-conversion setup. Their intraband coherence is shown to persist even after fast momentum scattering of the optically excited states.

Keywords

III-V semiconductors; aluminium compounds; excited states; gallium arsenide; light coherence; light scattering; secondary electron emission; semiconductor superlattices; Al/sub 0.35/Ga/sub 0.65/As-GaAs; Al/sub 0.35/Ga/sub 0.65/As-GaAs superlattice; Bloch oscillations; Bloch-oscillations; coherent dynamics; coherent optical excitation; fast momentum scattering; impulse relaxation; intraband coherence; luminescence up-conversion setup; optically excited states; resonant scattering; resonant scattering processes; resonant secondary emission; resonantly excited secondary emission; semiconductor; Excitons; Gallium arsenide; Optical polarization; Optical scattering; Optical superlattices; Particle scattering; Rayleigh scattering; Resonance light scattering; Semiconductor superlattices; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-576-X

Type

conf

DOI

10.1109/QELS.1999.807455

Filename

807455