Magnetic field dependence of THz radiation from InSb surface

Author

Ping Gu ; Tani, Motoaki ; Sakai, Kenji

Author_Institution

Commun. Res. Lab., Minist. of Posts & Telecommun., Kobe, Japan

fYear

1992

fDate

23-28 May 1992

Firstpage

171

Lastpage

172

Abstract

Summary form only given. We investigated the THz radiation from InSb surface in magnetic fields using a time-resolved detection system. The magnetic field (B) was applied in a direction parallel to the InSb surface. Thus, the orientation of the magnetic field is perpendicular to the surface electric field of the sample. The optical source is a mode-locked Ti:sapphire laser with 80 fs pulses.

Keywords

III-V semiconductors; high-speed optical techniques; indium compounds; laser beam effects; magnetic field effects; magneto-optical effects; submillimetre wave generation; surface phenomena; 80 fs; InSb; InSb surface; THz radiation; fs pulses; magnetic field; magnetic field dependence; magnetic field orientation; mode-locked Ti:sapphire laser; optical source; surface electric field; time-resolved detection system; Chirp; Electron mobility; Frequency; Magnetic fields; Magnetic materials; Optimized production technology; Pulse compression methods; Pulse shaping methods; Space vector pulse width modulation; Spectral shape;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-576-X

Type

conf

DOI

10.1109/QELS.1999.807483

Filename

807483