DocumentCode
3350480
Title
Hydrogen-related burn-in in GaAs/AlGaAs HBTs and implications for reliability
Author
Henderson, T. ; Ley, V. ; Kim, T. ; Moise, T. ; Hill, D.
Author_Institution
Corp. R&D, Texas Instrum. Inc., Dallas, TX, USA
fYear
1996
fDate
8-11 Dec. 1996
Firstpage
203
Lastpage
206
Abstract
We report a burn-in effect in carbon-doped GaAs/AlGaAs HBTs that results in an increase in dc current gain. The burn-in is the result of the annihilation of hydrogen-related recombination centers due to electron injection into the base. This burn-in effect needs to be taken into account in long-term bias stress testing of HBTs. Unrealistic values of mean time to failure and activation energy may be calculated otherwise.
Keywords
III-V semiconductors; aluminium compounds; electron-hole recombination; failure analysis; gallium arsenide; heterojunction bipolar transistors; semiconductor device reliability; semiconductor device testing; GaAs-AlGaAs; HBTs; activation energy; burn-in effect; dc current gain; electron injection; long-term bias stress testing; mean time to failure; recombination center annihilation; reliability; Annealing; Doping; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Hydrogen; Instruments; Occupational stress; Spontaneous emission; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.553568
Filename
553568
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