Improving faint-signal sensitivity of electrolyte-gated carbon nanotube field-effect transistors using external noise

Author

Hakamata, Yasufumi ; Ohno, Yasuhide ; Maehashi, Kenzo ; Inoue, Koichi ; Matsumoto, Kazuhiko

Author_Institution

Inst. of Sci. & Ind. Res., Osaka Univ., Ibaraki, Japan

fYear

2010

fDate

12-15 Oct. 2010

Firstpage

10

Lastpage

13

Abstract

Stochastic resonance (SR) in carbon nanotube field-effect transistors (CNT-FETs) was investigated to enhance their weak-signal response. When weak pulse trains were applied to the gate of a CNT-FET operating in a subthreshold regime, the correlation coefficient between the input and output voltages increased upon addition of noise with optimized intensity. SR was observed both in air and in solutions. These results indicate that external noise is able to improve faint-signal sensitivity of CNT-FETs. Therefore, CNT-FETs based on stochastic resonance are promising candidates for highly sensitive label-free sensors.

Keywords

carbon nanotubes; field effect transistors; sensitivity; correlation coefficient; electrolyte-gated carbon nanotube field-effect transistors; external noise; faint-signal sensitivity; label-free sensors; stochastic resonance; Biosensors; CNTFETs; Correlation; Logic gates; Nanobioscience; Noise; Strontium;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference (NMDC), 2010 IEEE

Conference_Location

Monterey, CA

Print_ISBN

978-1-4244-8896-4

Type

conf

DOI

10.1109/NMDC.2010.5652537

Filename

5652537