Arrayed high efficiency dual-integrated microstructured semiconductor neutron detectors

Low-power microstructured semiconductor neutron detector (MSND) devices have long been investigated as a high-efficiency replacement for thin-film diodes for thermal neutron detection. The detector devices were improved by stacking two 1cm² devices and integrating their responses together to act as a single diode, increasing detection efficiency to over 42%. The need for larger active area devices has driven further improvement of the technology. A large active area device has been developed by arraying seventy-two 1cm² devices together into two 6×6 configurations, dual-stacking them, and integrating their responses together in order to act as a single detector device. The intrinsic thermal neutron detection efficiency was found to be 7.03±0.04%. The leakage current of the 36cm² device was -42nA at -5V bias and the capacitance was found to be 54pF at -5V bias.