3D Simulation of transient current and charge collection induced by heavy ion in SOI transistors

The 3D simulation result shows how the heavy ion strike location, the structure (with or without body contact) of the device, and the energy of strike ion affect the parasitic bipolar gain. Short distance between strike location and body contact reduces the charge collection by drain more obviously than that in the case of longer distance. The highlight of the paper lies in the discovery and analysis of charge collection amplification absence in the device with body contact. Although no bipolar amplification is observed macroscopically, there is still parasitic bipolar element turned on for a short time. The short duration of the electron injection from source and the electron collection of the source reduce the charge collection of drain.