Impact of profile scaling on high-injection barrier effects in advanced UHV/CVD SiGe HBTs

Author

Joseph, A.J. ; Cressler, J.D. ; Richey, D.M. ; Harame, D.L.

Author_Institution

Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

253

Lastpage

256

Abstract

We present the first comprehensive investigation of the impact of Ge profile shape as well as the scaling of collector and base doping profiles on high-injection heterojunction barrier effects in advanced UHV/CVD SiGe HBTs over the temperature range of -73/spl deg/C to 85/spl deg/C. Results indicate that careful Ge profile design tailored with a proper collector profile design are required to push the barrier onset current density (J/sub C,barrier/) to well beyond the typical circuit operating point.

Keywords

Ge-Si alloys; current density; doping profiles; heterojunction bipolar transistors; microwave bipolar transistors; secondary ion mass spectra; semiconductor doping; semiconductor materials; -73 to 85 C; Ge profile shape; SCORPIO simulation; SIMS profiles; Si-SiGe; UHV/CVD SiGe HBT; barrier onset current density; base doping profiles; collector doping profiles; high-injection barrier effects; microwave transistors; polysilicon emitter contact; profile scaling; Current density; Degradation; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Radio frequency; Shape; Silicon germanium; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553578

Filename

553578