• DocumentCode
    3352187
  • Title

    A new concept and first development results of a PZT thin film actuator

  • Author

    Hoffmann, Marco ; Kuppers, H. ; Schneller, T. ; Bottger, U. ; Schnakenberg, U. ; Mokwa, W. ; Waser, R.

  • Author_Institution
    Electron. Mater. Res. Labs., RWTH Aachen, Germany
  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    519
  • Abstract
    High piezoelectric coupling coefficients of PZT-based material systems can be employed for actuator functions in micro-electro-mechanical systems (MEMS) offering displacements and forces which outperform standard solutions. Within this project a stress compensated, PZT coated cantilever concept for a 6" silicon micro machining process was developed. The actuator was designed for a tip displacement of 10 μm by a cantilever length of 200 μm - 1000 μm. Therefore, silicon bulk micro machining technique was used in combination with CSD technique. In the context of this paper the deposition and integration processes for the different materials were described. Special attention was given to the Zr/Ti ratio of the PZT thin films to obtain a high piezoelectric coefficient. Si3N 4 was used for stress compensation of the deposited layers. For first characterizations XRD, SEM, microscopy, stress-, hysteresis-, and CV-measurements were used
  • Keywords
    X-ray diffraction; characteristics measurement; lead compounds; microactuators; micromachining; piezoelectric actuators; piezoelectric thin films; relays; scanning electron microscopy; 200 to 1000 micron; 6 inch; CSD technique; CV measurements; PZT; PbZrO3TiO3; SEM; XRD; actuator functions; bulk micro machining technique; cantilever concept; cantilever length; micro machining process; micro-electro-mechanical systems; piezoelectric coefficient; piezoelectric coupling coefficients; piezoelectric thin film actuator; stress compensation; tip displacement; Machining; Microelectromechanical systems; Micromechanical devices; Piezoelectric actuators; Piezoelectric films; Piezoelectric materials; Scanning electron microscopy; Silicon; Stress; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-5940-2
  • Type

    conf

  • DOI
    10.1109/ISAF.2000.941612
  • Filename
    941612