• DocumentCode
    3352504
  • Title

    A statistical strategy for directing process capability improvement efforts

  • Author

    Hirschman, K.D. ; Fennelly, T.J., Jr.

  • Author_Institution
    Dept. of Microelectron. Eng., Rochester Inst. of Technol., NY, USA
  • fYear
    1995
  • fDate
    17-19 Sep 1995
  • Firstpage
    41
  • Lastpage
    46
  • Abstract
    A statistical strategy which can be used to direct process capability improvement efforts is presented. This method is an extension of Quality Engineering by Design (QED) techniques, and incorporates both process simulation techniques and product manufacturing data. The resulting combination provides process engineers and management in a manufacturing environment with a useful weapon against variation. The focus is on reducing process variation in order to achieve device performance specifications. A case study is presented on the variation reduction of the nMOS threshold voltage (Vtn) in the RIT CMOS process. The end result is a plan which will determine where variation reduction efforts will be most rewarded, and possible strategies which can be used to achieve the required product quality
  • Keywords
    CMOS integrated circuits; integrated circuit manufacture; quality control; semiconductor process modelling; statistical analysis; QED; Quality Engineering by Design; RIT CMOS process; microelectronics; nMOS threshold voltage; process simulation; process variation; product manufacturing; statistical strategy; CMOS process; Data engineering; Design engineering; Engineering management; Environmental management; MOS devices; Manufacturing processes; Threshold voltage; Virtual manufacturing; Weapons;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 1995., IEEE/UCS/SEMI International Symposium on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-2928-7
  • Type

    conf

  • DOI
    10.1109/ISSM.1995.524355
  • Filename
    524355