DocumentCode
3352533
Title
Design of An Ultra Wideband Transmitter in 0.18μm 3D Silicon on Insulator CMOS
Author
Zhang, Zhaonian ; Andreou, Andreas G.
Author_Institution
Johns Hopkins Univ., Baltimore
fYear
2007
fDate
14-16 March 2007
Firstpage
750
Lastpage
753
Abstract
The three-dimensional (3D) integration of silicon on insulator (SOI) wafers has provided us with a tremendous opportunity for ultra-high density, high performance and low-power integrated circuits. We present in this paper an ultra wideband transmitter fabricated in a fully depleted 3D SOI technology. It operates below 960 MHz with small ominidirectional antennas, such as a dipole.
Keywords
CMOS integrated circuits; dipole antennas; integrated circuit design; low-power electronics; radio transmitters; silicon-on-insulator; ultra wideband antennas; 3D silicon on insulator CMOS wafer integration; frequency 960 MHz; low-power integrated circuit; ominidirectional dipole antenna; size 0.18 μm; ultra wideband transmitter fabrication; Bandwidth; CMOS technology; Dipole antennas; Frequency; High performance computing; Integrated circuit interconnections; Integrated circuit technology; Silicon on insulator technology; Transmitters; Ultra wideband technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Information Sciences and Systems, 2007. CISS '07. 41st Annual Conference on
Conference_Location
Baltimore, MD
Print_ISBN
1-4244-1063-3
Electronic_ISBN
1-4244-1037-1
Type
conf
DOI
10.1109/CISS.2007.4298407
Filename
4298407
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