DocumentCode :
3352585
Title :
The Apsel65 front-end chip for the readout of pixel sensors in the 65 nm CMOS node
Author :
Gaioni, L. ; Manghisoni, M. ; Ratti, L. ; Re, V. ; Traversi, G.
Author_Institution :
INFN, Sezione di Pavia, Pavia, Italy
fYear :
2011
fDate :
23-29 Oct. 2011
Firstpage :
1966
Lastpage :
1971
Abstract :
This work is concerned with the design criteria and the experimental characterization of front-end electronics in a 65 nm CMOS technology for the readout of hybrid pixels and of monolithic active pixel sensors using a deep N-well as their collecting electrode. The work will present a summary of the experimental results relevant to a prototype chip, named Apsel65, focusing particularly on the front-end processor features and performance.
Keywords :
CMOS integrated circuits; nuclear electronics; position sensitive particle detectors; readout electronics; silicon radiation detectors; Apsel65 front-end chip; CMOS technology; front-end electronics; front-end processor; hybrid pixel readout system; monolithic active pixel sensors; pixel sensor readout system; silicon vertex detector; size 65 nm; CMOS integrated circuits; CMOS technology; Capacitance; Capacitors; Noise; CMOS; DNW MAPS; Device Scaling; Low noise front-end electronics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE
Conference_Location :
Valencia
ISSN :
1082-3654
Print_ISBN :
978-1-4673-0118-3
Type :
conf
DOI :
10.1109/NSSMIC.2011.6154395
Filename :
6154395
Link To Document :
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