DocumentCode :
3352965
Title :
InAs avalanche photodiodes for X-ray detection
Author :
Gomes, Rajiv B. ; Ker, Pin Jem ; Tan, Chee Hing ; David, John P R ; Ng, Jo Shien
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
fYear :
2011
fDate :
23-29 Oct. 2011
Firstpage :
2071
Lastpage :
2073
Abstract :
Pulse height spectra were obtained by irradiating 55Fe radioactive X-ray source on an InAs n-i-p APD cooled to 77K. The full width half maximum (FWHM) of the detected photopeak at 5.9 keV improves with increasing reverse bias. The FWHM decreases rapidly with gain from 2 keV at M = 1 to ~950eV at M = 5.2, improving the minimum detectable energy and resolution of the APD. The larger than expected FWHM is due to non-optimised packaging that leads to increased leakage current of the detector.
Keywords :
X-ray apparatus; X-ray detection; avalanche photodiodes; indium compounds; ionisation chambers; radioactive sources; FWHM; InAs; Pulse height spectra; X-ray detection; avalanche photodiodes; electron volt energy 2 keV; electron volt energy 5.9 keV; electron volt energy 950 eV; full width half maximum; irradiating 55Fe radioactive X-ray source; minimum detectable energy; n-i-p APD; non-optimised packaging; photopeak; temperature 77 K;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE
Conference_Location :
Valencia
ISSN :
1082-3654
Print_ISBN :
978-1-4673-0118-3
Type :
conf
DOI :
10.1109/NSSMIC.2011.6154421
Filename :
6154421
Link To Document :
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