DocumentCode
335297
Title
RTP multivariable temperature controller development
Author
Elia, Curtis F.
Author_Institution
Integrated Syst. Inc., Santa Clara, CA, USA
Volume
1
fYear
1994
fDate
29 June-1 July 1994
Firstpage
907
Abstract
Multivariable temperature controllers were developed and implemented in real-time for the applied materials rapid thermal processing (RTP) chamber for 125, 150, and 200 mm silicon wafers. The controllers were used for oxidation and annealing processes during semiconductor integrated circuit manufacturing. The resulting data, show that the developed controllers successfully controlled the wafer temperatures at multiple points across the wafer, maintaining repeatable operating conditions to insure consistent uniformity. The developed controllers were able to provide performance not achievable by manual tuning of an existing PID controller.
Keywords
integrated circuit manufacture; monolithic integrated circuits; multivariable control systems; oxidation; rapid thermal annealing; rapid thermal processing; temperature control; 125 mm; 150 mm; 200 mm; annealing; applied materials rapid thermal processing chamber; multivariable temperature controller; oxidation; semiconductor integrated circuit manufacturing; silicon wafers; Control design; Control systems; Heating; Lamps; Semiconductor device modeling; Size control; Temperature control; Temperature measurement; Thermal sensors; Three-term control;
fLanguage
English
Publisher
ieee
Conference_Titel
American Control Conference, 1994
Print_ISBN
0-7803-1783-1
Type
conf
DOI
10.1109/ACC.1994.751875
Filename
751875
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