DocumentCode
3353018
Title
Global planarization technique/CMP by high precision polishing and its characteristics
Author
Karaki-Doy, Toshiroh ; Jeong, Haedo ; Nakagawa, Takeo ; Ohmori, Hitoshi ; Kasai, Toshio
Author_Institution
Fac. of Educ., Saitama Univ., Urawa, Japan
fYear
1995
fDate
17-19 Sep 1995
Firstpage
214
Lastpage
217
Abstract
In this research we built a prototype of planarization polishing or so-called Chemical and Mechanical Polishing (CMP) using high precision mechanical processing techniques, and thereafter, gained an understanding of basic processing characteristics using model device wafers. As a result, notedly better characteristics such as planarity and uniformity than those obtained to date have been achieved and thus we have gained guidelines so as to implement those characteristics as part of the semiconductor manufacturing equipment
Keywords
polishing; semiconductor technology; CMP; chemical and mechanical polishing; global planarization; high precision mechanical processing; semiconductor manufacturing; Chemical engineering; Chemical industry; Fabrication; Kinematics; Logic devices; Planarization; Prototypes; Semiconductor device manufacture; Surface topography; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 1995., IEEE/UCS/SEMI International Symposium on
Conference_Location
Austin, TX
Print_ISBN
0-7803-2928-7
Type
conf
DOI
10.1109/ISSM.1995.524394
Filename
524394
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