Control of the Deposition Ratio of Bi2Te3 and Sb2 Te3 in a Vacuum Evaporator for fabrication of Peltier Elements

Author

Gonçalves, L.M. ; Rocha, J.G. ; Correia, J.H. ; Couto, C.

Author_Institution

Dept. of Industrial Electron., Minho Univ.

Volume

4

fYear

2006

fDate

9-13 July 2006

Firstpage

2773

Lastpage

2777

Abstract

This article reports the main problem and the corresponding solution of the co-evaporation of Bi₂Te₃ and Sb ₂Te₃ films for the fabrication of Peltier elements. This main problem consists in the control of the deposition rates of the two elements: Bi or Sb and Te, which have very different vapor pressures. The control of the deposition ratio was achieved by means of a PID controller, which permitted the fabrication of thin-film Peltier elements that produce a temperature gradient in the order of 2degC between their hot and cold junctions, when measured at free air conditions

Keywords

bismuth compounds; p-n junctions; semiconductor device manufacture; semiconductor growth; semiconductor materials; semiconductor thin films; three-term control; tin compounds; vapour deposited coatings; vapour deposition; Bi₂Te₃; PID controller; Sb₂Te₃; deposition ratio control; thin-film Peltier element fabrication; vacuum evaporator; Bismuth; Fabrication; Optical filters; Optical materials; Sputtering; Tellurium; Temperature control; Temperature sensors; Thermoelectric devices; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics, 2006 IEEE International Symposium on

Conference_Location

Montreal, Que.

Print_ISBN

1-4244-0496-7

Electronic_ISBN

1-4244-0497-5

Type

conf

DOI

10.1109/ISIE.2006.296053

Filename

4078829